| PART |
Description |
Maker |
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| CM400HG-66H |
3rd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| CM1000E4C-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| SBX2540 SBX2550 |
2nd Generation Bypass Diodes for Solar Modules - Schottky Barrier Rectifiers
|
Diotec Semiconductor
|
| CM900HB-90H |
Single IGBTMOD?/a> HVIGBT 900 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
Single IGBTMODHVIGBT 900 Amperes/4500 Volts
Single IGBTMOD HVIGBT 900 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| QID3320004 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
